Substrate processing apparatus and substrate processing method
AssigneeTokyo Electron Limited
InventorsKeisuke Yoshida, Yuzo Ohishi, Keisuke Sasaki, Shoichi Terada
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Abstract
A substrate processing apparatus includes a hot plate which supports and heats a substrate, a light source which emits etching energy beam such that the etching energy beam etches the substrate held by the hot plate, a window device which is positioned between the light source and the hot plate and transmits the etching energy beam emitted by the light source toward the substrate, and an adjusting device which adjusts emission amounts of the etching energy beam from portions of the window device toward the substrate such that the adjusting device reduces difference in etching amounts of portions of the substrate.
Claims20
A substrate processing apparatus, comprising:
- a hot plate configured to support and heat a substrate;
- a light source configured to emit etching energy beam such that the etching energy beam etches the substrate held by the hot plate;
- a window device positioned between the light source and the hot plate and configured to transmit the etching energy beam emitted by the light source toward the substrate;
- and
- an adjusting device configured to adjust emission amounts of the etching energy beam from portions of the window device toward the substrate such that the adjusting device reduces difference in etching amounts of portions of the substrate,
- wherein the adjusting device is configured to adjust the emission amounts of the etching energy beam such that an emission amount of the etching energy beam from a central portion of the window device toward the substrate is increased relative to an emission amount of the etching energy beam from an outer peripheral portion of the window device toward the substrate as a reference.
A method for processing a substrate, comprising:
- positioning a substrate on a hot plate configured to hold and heat the substrate;
- emitting etching energy beam from a light source to the substrate held by the hot plate such that the etching energy beam is transmitted through a window device positioned between the light source and the hot plate and irradiates the substrate;
- and
- adjusting emission amounts of the etching energy beam from portions of the window device toward the substrate such that difference in etching amounts of portions of the substrate is reduced,
- wherein the adjusting of the emission amounts of the etching energy beam comprises increasing an emission amount of the etching energy beam from a central portion of the window device toward the substrate relative to an emission amount of the etching energy beam from an outer peripheral portion of the window device toward the substrate as a reference.
Dependencies are inferred from the claim text.