Semiconductor device and electronic device

A semiconductor device comprising:

• a first driver circuit;
• a second driver circuit;
• a third driver circuit;
• a first wiring electrically connected to the first driver circuit;
• a second wiring electrically connected to one of the second driver circuit and the third driver circuit;
• a third wiring;
• and
• a cell array comprising a plurality of cells, the cell array being between the second driver circuit and the third driver circuit,
• wherein a first cell in the plurality of cells comprises a transistor comprising a first gate electrode, an oxide semiconductor film, and a second gate electrode,
• wherein the second wiring serves as the first gate electrode,
• wherein the third wiring serves as the second gate electrode,
• wherein the second wiring is electrically connected to the third wiring through a first contact hole outside the cell array, and
• wherein the second wiring is electrically connected to the third wiring through a second contact hole inside the cell array.

A semiconductor device comprising:

• a first driver circuit;
• a second driver circuit;
• a first wiring electrically connected to the first driver circuit;
• a second wiring electrically connected to the second driver circuit;
• a third wiring;
• and
• a cell array comprising a plurality of cells,
• wherein a first cell in the plurality of cells comprises a transistor comprising a first gate electrode, an oxide semiconductor film, and a second gate electrode,
• wherein the second wiring serves as the first gate electrode,
• wherein the third wiring serves as the second gate electrode,
• wherein the second wiring is electrically connected to the third wiring through a first contact hole outside the cell array,
• wherein the first contact hole is in a region between the cell array and the second driver circuit, and
• wherein a width of the second wiring in the region is larger than a width of the second wiring overlapping with the cell array.

A semiconductor device comprising:

• a first driver circuit;
• a second driver circuit;
• a third driver circuit;
• a first wiring electrically connected to the first driver circuit;
• a second wiring electrically connected to one of the second driver circuit and the third driver circuit;
• a third wiring;
• and
• a cell array comprising a plurality of cells, the cell array being between the second driver circuit and the third driver circuit,
• wherein a first cell in the plurality of cells comprises a transistor comprising a first gate electrode, an oxide semiconductor film, and a second gate electrode,
• wherein the second wiring serves as the first gate electrode,
• wherein the third wiring serves as the second gate electrode,
• wherein the second wiring is electrically connected to the third wiring through a first contact hole outside the cell array,
• wherein the first contact hole is in a region between the cell array and the second driver circuit, and
• wherein a width of the second wiring in the region is larger than a width of the second wiring overlapping with the cell array.