Film deposition method and film deposition apparatus

A film deposition method for filling a recessed pattern formed in a surface of a substrate with a film from a bottom surface of the recessed pattern, the method comprising steps of:

• supplying ClF3 gas to a top surface of a substrate and an upper portion of a recessed pattern formed in the top surface of the substrate, thereby forming an adsorption blocking group containing fluorine on the top surface of the substrate and the upper portion of the recessed pattern;
• supplying a first reaction gas to a surface of the substrate including the top surface and the recessed pattern to cause the first reaction gas to adsorb on an area where the adsorption blocking group containing fluorine is not formed on, the area including a bottom portion of the recessed pattern other than the top surface of the substrate and the upper portion of the recessed pattern;
• and
• supplying a second reaction gas reactable with the first reaction gas to the surface of the substrate to produce a reaction product of the first reaction gas adsorbed on the bottom portion of the recessed pattern and the second reaction gas, thereby depositing a molecular layer of the reaction product on the bottom portion of the recessed pattern.