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US 10,590,532 B2Granted
Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
AssigneeToshiba Memory Corporation
InventorNaomi Fukumaki
Life of this patent
Estimating the term…
Abstract
In one embodiment, a semiconductor manufacturing apparatus includes first and second tanks configured to store a gas fed from a gas feeder. The apparatus further includes a chamber configured to process a wafer by using the gas fed from the gas feeder, the first tank or the second tank. The apparatus further includes a controller configured to control feeding of the gas to the first tank, the second tank and the chamber.
Claims10
A semiconductor manufacturing apparatus comprising:
- a first tank and a second tank configured to store a gas fed from a gas feeder;
- a chamber configured to process a wafer by using the gas fed from the gas feeder, the first tank, or the second tank;
- a gas flow path configured to feed the gas from the gas feeder to the chamber via neither of the first tank and the second tank;
- a first flow path configured to feed the gas from the gas flow path to the first tank;
- a second flow path configured to feed the gas from the gas flow path to the second tank;
- a third flow path configured to feed the gas from the first tank to the gas flow path;
- a fourth flow path configured to feed the gas from the second tank to the gas flow path;
- and
- a controller configured to control feeding of the gas to the first tank, the second tank, and the chamber, wherein the controller controls:
- a gas feeding process of feeding the gas from the gas feeder to the chamber via neither of the first tank and the second tank and via the gas flow path,
- a first process of feeding the gas from the gas feeder to the first tank via the first flow path,
- a second process of feeding the gas from the gas feeder to the second tank via the second flow path,
- a third process of feeding the gas from the first tank to the chamber via the third flow path, and
- a fourth process of feeding the gas from the second tank to the chamber via the fourth flow path.
11 more elements
A semiconductor manufacturing apparatus comprising:
- a first tank and a second tank configured to store a gas fed from a gas feeder;
- a chamber configured to process a wafer by using the gas fed from the gas feeder, the first tank, or the second tank;
- a first flow rate controller provided between the gas feeder and the first and second tanks;
- a second flow rate controller provided between the first and second tanks and the chamber;
- a first flow path configured to feed the gas from the first flow rate controller to the first tank;
- a second flow path configured to feed the gas from the first flow rate controller to the second tank;
- a third flow path configured to feed the gas from the first tank to the second flow rate controller;
- a fourth flow path configured to feed the gas from the second tank to the second flow rate controller;
- a fifth flow path configured to feed the gas from the second flow rate controller to the first tank;
- a sixth flow path configured to feed the gas from the second flow rate controller to the second tank;
- and
- a controller configured to control feeding of the gas to the first tank, the second tank, and the chamber, wherein the controller controls:
- a first process of feeding the gas from the gas feeder to the first tank via the first flow path,
- a second process of feeding the gas from the gas feeder to the second tank via the second flow path,
- a third process of feeding the gas from the first tank to the chamber via the third flow path,
- a fourth process of feeding the gas from the second tank to the chamber via the fourth flow path,
- a fifth process of feeding the gas from the second tank to the first tank, and
- a sixth process of feeding the gas from the first tank to the second tank.
15 more elements
Dependencies are inferred from the claim text.