Wafer-level package with enhanced performance

An apparatus comprising:

• a first thinned die comprising a first device layer and a first dielectric layer over the first device layer, wherein the first device layer comprises a plurality of first die contacts at a bottom surface of the first device layer;
• a multilayer redistribution structure comprising a plurality of package contacts on a bottom surface of the multilayer redistribution structure and redistribution interconnects that connect the plurality of first die contacts to certain ones of the plurality of package contacts, wherein the multilayer redistribution structure is free of glass fiber and connections between the redistribution interconnects and the plurality of first die contacts are solder-free;
• a first mold compound residing over the multilayer redistribution structure and around the first thinned die, and extending beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die, wherein the top surface of the first thinned die is exposed at a bottom of the opening;
• a second mold compound filling the opening and in contact with the top surface of the first thinned die;
• and
• a second intact die residing over the multilayer redistribution structure, wherein:
• the second intact die has a second device layer and an intact silicon substrate over the second device layer;
• and
• the first mold compound encapsulates the second intact die.