Micro-electro-mechanical system (MEMS) structures and design structures

A method comprising:

• forming a Micro-Electro-Mechanical System (MEMS) beam structure comprising:
• forming a sacrificial material, which is comprised of both tungsten material and semiconductor material, on a substrate;
• forming the MEMS beam structure above the tungsten material and the semiconductor material;
• forming both the tungsten material and the semiconductor material above the MEMS beam structure;
• forming a lid over the tungsten material formed above the MEMS beam structure;
• etching the semiconductor material formed above the MEMS beam structure while etching the tungsten material formed above the MEMS beam structure to form an upper cavity structure above the MEMS beam structure and below the lid;
• and
• etching both the tungsten material and the semiconductor material below the MEMS beam structure to form a lower cavity structure above the substrate and below the MEMS beam structure,
• wherein the etching the semiconductor material formed above the MEMS beam structure, the tungsten material formed above the MEMS beam structure, and both the tungsten material and the semiconductor material below the MEMS beam structure comprises performing an XeF2 etching process,
• wherein the semiconductor material is silicon material, and wherein forming the tungsten material and silicon material below the MEMS beam structure comprises forming the tungsten material on the substrate and forming the silicon material over the tungsten material,
• wherein the tungsten material and silicon material above the MEMS beam structure comprises forming the silicon material within a via in contact with the silicon material below the MEMS beam structure and forming the tungsten material over the silicon material, and
• further comprising:
• forming a vent hole in the lid to expose at least the silicon material above the MEMS beam structure;
• forming an additional silicon material on the tungsten material above the MEMS beam structure
• planarizing the additional silicon material;
• forming the lid over the planarized additional silicon material;
• forming another vent hole in the lid, exposing the additional silicon material;
• and
• etching the silicon material and the tungsten material above the MEMS beam structure and the additional silicon material to form the upper cavity.

A method comprising:

• forming a Micro-Electro-Mechanical System (MEMS) beam structure comprising:
• forming a sacrificial material, which is comprised of both tungsten material and semiconductor material, on a substrate;
• forming the MEMS beam structure above the tungsten material and the semiconductor material;
• forming both the tungsten material and the semiconductor material above the MEMS beam structure;
• forming a lid over the tungsten material formed above the MEMS beam structure;
• etching the semiconductor material formed above the MEMS beam structure while etching the tungsten material formed above the MEMS beam structure to form an upper cavity structure above the MEMS beam structure and below the lid;
• and
• etching both the tungsten material and the semiconductor material below the MEMS beam structure to form a lower cavity structure above the substrate and below the MEMS beam structure,
• wherein the etching the semiconductor material formed above the MEMS beam structure, the tungsten material formed above the MEMS beam structure, and both the tungsten material and the semiconductor material below the MEMS beam structure comprises performing an XeF2 etching process,
• wherein the semiconductor material is silicon material, and wherein forming the tungsten material and silicon material below the MEMS beam structure comprises forming the tungsten material on the substrate and forming the silicon material over the tungsten material,
• wherein the tungsten material and silicon material above the MEMS beam structure comprises forming the silicon material within a via in contact with the silicon material below the MEMS beam structure and forming the tungsten material over the silicon material, and
• further comprising:
• forming a vent hole in the lid to expose at least the silicon material above the MEMS beam structure;
• and
• forming another vent hole in the lid to expose the tungsten material above the MEMS beam structure.