Silicon carbide microelectromechanical structure, device, and method

An electromechanical device, comprising:

• a first substrate comprising silicon carbide, wherein the first substrate comprises an anchor material structure and a movable suspended material structure, the movable suspended material structure being separated from the anchor material structure by a trench on at least one side of the anchor material structure, the trench having a sidewall angle with respect to the first substrate between 3 and 15 degrees and a width of about 0.5 microns to about 8 microns;
• a second substrate;
• and
• at least one electrically insulating and thermally conducting interface material layer disposed between the anchor material structure and the second substrate;
• wherein the width of the trench and the sidewall angle of the trench region are configured to provide a predetermined extent of electrostatic coupling between the suspended material structure and the anchor material structure.