High-density metal-insulator-metal capacitors
AssigneeGlobalfoundries Inc.
InventorsRobert J. Fox, III, Lili Cheng, Roderick A. Augur
Life of this patent
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Abstract
Methods for fabricating a structure that includes a metal-insulator-metal (MIM) capacitor and structures that include a MIM capacitor. The MIM capacitor includes a layer stack with a first electrode, a second electrode, and a third electrode. The layer stack includes a pilot opening extending at least partially through at least one of the first electrode, the second electrode, and the third electrode. A dielectric layer is arranged over the metal-insulator-metal capacitor, and includes a via opening extending vertically to the pilot opening. A via is arranged in the via opening and the pilot opening. The pilot opening has a cross-sectional area that is less than a cross-sectional area of the via opening.
Claims19
A structure comprising:
- a metal-insulator-metal capacitor including a layer stack with a first electrode, a second electrode, and a third electrode, the second electrode including a first portion and a second portion, the layer stack including a first pilot opening extending at least partially through the first portion of the second electrode, and the second portion of the second electrode arranged vertically between the first electrode and the third electrode;
- a collar arranged over the first portion of the second electrode;
- a first dielectric layer over the metal-insulator-metal capacitor, the first dielectric layer including a first via opening extending to the first pilot opening, and the first via opening extending at least partially through the collar;
- and a first via in the first via opening and the first pilot opening, wherein the first via opening has a cross-sectional area, and the first pilot opening has a cross-sectional area that is less than the cross-sectional area of the first via opening.
A structure comprising:
- a metal-insulator-metal capacitor including a layer stack with a first electrode, a second electrode, and a third electrode, the layer stack including a pilot opening extending completely through the third electrode and at least partially through the first electrode;
- a first dielectric layer over the metal-insulator-metal capacitor, the first dielectric layer including a via opening extending to the pilot opening;
- and
- a via in the via opening and the pilot opening,
- wherein the third electrode and the first electrode are connected by the via, the via opening has a cross-sectional area, the pilot opening has a cross-sectional area that is less than the cross-sectional area of the via opening, the second electrode includes a slot, and the slot has a boundary that surrounds the pilot opening and the via opening.
A method comprising:
- forming a first electrode and a second electrode of a metal-insulator-metal capacitor;
- depositing a conductor layer over the first electrode and the second electrode;
- patterning the conductor layer to form a collar arranged over a first portion of the second electrode and a first pilot opening extending through the collar and at least partially through the second electrode;
- after patterning the conductor layer, forming a dielectric layer over the collar;
- forming a first via opening extending through the dielectric layer to the first pilot opening and at least partially through the collar;
- and
- forming a first via in the first via opening and the first pilot opening,
- wherein the first via opening has a cross-sectional area, and the first pilot opening has a cross-sectional area that is less than the cross-sectional area of the first via opening.
Dependencies are inferred from the claim text.