Ebeam universal cutter
AssigneeIntel Corporation
InventorsYan A. Borodovsky, Donald W. Nelson, Mark C. Phillips
Life of this patent
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Abstract
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.
Claims17
A column for e-beam tool, the column comprising:
- an electron source for providing a beam of electrons;
- a limiting aperture coupled with the electron source along a pathway of the beam of the beam of electrons;
- high aspect ratio illumination optics coupled with the limiting aperture along the pathway of the beam of the beam of electrons;
- a shaping aperture coupled with the high aspect ratio illumination optics along the pathway of the beam of the beam of electrons;
- a blanker aperture array (BAA) coupled with the shaping aperture along the pathway of the beam of the beam of electrons, the BAA comprising:
- a first array of openings along a first direction;
- and
- a second array of openings along the first direction and staggered from the first array of openings, the first and second arrays of openings together forming an array having a pitch in the first direction;
- and
- a final aperture coupled with the BAA along the pathway of the beam of the beam of electrons;
- and
- a sample stage for receiving the beam of electrons, wherein a scan direction of the sample stage is along a second direction, orthogonal to the first direction of the BAA, and wherein the pitch of the array of the BAA corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.
A column for e-beam tool, the column comprising:
- an electron source for providing a beam of electrons;
- a blanker aperture array (BAA), comprising:
- a first array of openings along a first direction;
- and
- a second array of openings along the first direction and staggered from the first array of openings, the first and second arrays of openings together forming an array having a pitch in the first direction;
- and
- a sample stage for receiving the beam of electrons, wherein a scan direction of the sample stage is along a second direction, orthogonal to the first direction of the BAA, and wherein the pitch of the array of the BAA corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.
Dependencies are inferred from the claim text.