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US 10,573,482 B2Granted
Piezoelectric vacuum transistor
AssigneeInternational Business Machines Corporation
InventorsQing Cao, Kangguo Cheng, Zhengwen Li, Fei Liu
Life of this patent
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Abstract
A vacuum transistor includes a substrate and a first terminal formed on the substrate. A piezoelectric element has a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal. The gap is adjusted in accordance with an electrical field on the piezoelectric element.
Claims14
A vacuum transistor, comprising:
- a substrate having a trench formed therein;
- a first terminal formed on the substrate;
- a piezoelectric element;
- and
- a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the trench to provide a gap between the first terminal and the second terminal, the gap being adjusted in accordance with an electrical field on the piezoelectric element.
2 more elements
A vacuum transistor, comprising:
- a substrate having a trench formed therein;
- a first terminal formed within the trench;
- a piezoelectric element;
- a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the trench to provide a gap between the first terminal and the second terminal, the gap being adjusted in accordance with an electrical field on the piezoelectric element;
- and
- electrodes formed on the piezoelectric element to generate the electrical field.
3 more elements
Dependencies are inferred from the claim text.