Component carrier with a bypass capacitance comprising dielectric film structure
AssigneeAT&S Austria Technologie & Systemtechnik Aktiengesellschaft
InventorWilhelm Tamm
Life of this patent
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Abstract
There is provided a component carrier comprising: (a) a stack of at least one electrically conductive layer structure and at least one electrically insulating layer structure; and (b) a bypass capacitance structure formed on an/or within the stack. The bypass capacitance structure comprises an electrically conductive film structure having a rough surface, a dielectric film structure formed on the rough surface, and a further electrically conductive film structure formed on the dielectric film structure.
Claims17
An electronic system, comprising:
- a component carrier having
- a stack of at least one electrically conductive layer structure and at least one electrically insulating layer structure;
- and
- a bypass capacitance structure formed on and/or within the stack;
- wherein the bypass capacitance structure comprises an electrically conductive film structure having a rough surface, a dielectric film structure formed on the rough surface, and a further electrically conductive film structure formed on the dielectric film structure;
- wherein the dielectric film structure has been formed by physical vapor deposition;
- an electronic component,
- wherein the electronic component is connected to the component carrier, and
- wherein the electrically conductive film structure is arranged spatially closer to the electronic component than the further electrically conductive film structure;
- and
- a metallic interconnection,
- wherein the metallic interconnection electrically connects the electronic component with the further electrically conductive film structure, and
- wherein the metallic interconnection does not connect the electronic component with the electrically conductive film structure.
A method for manufacturing an electronic system comprising a component carrier and an electronic component, the method, comprising:
- forming a stack of at least one electrically conductive layer structure and at least one electrically insulating layer structure;
- and
- arranging a bypass capacitance structure on and/or within the stack, wherein the capacitance structure is formed by
- forming an electrically conductive film structure having a rough surface;
- forming a dielectric film structure on the rough surface by physical vapor deposition;
- and
- forming a further electrically conductive film structure on the dielectric film structure;
- connecting the electronic component to the component carrier such that the electrically conductive film structure is arranged spatially closer to the electronic component that the further electrically conductive film structure;
- and
- forming a metallic interconnection that electrically connects the electronic component with the further electrically conductive film structure, and
- so that the metallic interconnection does not connect the electronic component with the electrically conductive film structure.
Dependencies are inferred from the claim text.