Image sensors having multi-storage image sensor pixels
AssigneeSemiconductor Components Industries, LLC
InventorSergey Velichko
Life of this patent
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Abstract
An image sensor pixel may include a photodiode, one or more storage diodes, one or more potential barrier structures, one or more capacitors, and a floating diffusion region. The photodiode may be coupled to a storage diode and a first capacitor, and a first potential barrier structure may be interposed between the storage diode and the first capacitor. The photodiode may also be coupled to additional storage diodes and additional capacitors in a similar manner. Additionally, the photodiode may be directly separated from a given capacitor via a corresponding potential barrier structure. Each capacitor may store overflow charge from one or more storage diodes and/or the photodiode and may be connected to the floating diffusion via respective transistors.
Claims21
An image sensor pixel, comprising:
- a photosensitive region that generates charge in response to incident light;
- a floating diffusion region;
- a charge storage region coupled to the floating diffusion region via a transistor;
- and
- a potential barrier structure that separates the photosensitive region from the charge storage region, wherein the potential barrier structure comprises a barrier diode structure and wherein the potential barrier structure is configured to transfer a portion of the generated charged from the photosensitive region to the charge storage region.
A method of operating an image sensor pixel that includes a photodiode coupled to a first charge storage region via a storage diode and coupled to a second charge storage region via a potential barrier structure, and a floating diffusion region coupled to the first and second charge storage regions, wherein a transfer transistor is interposed between the photodiode and the storage diode, the method comprising:
- with the photodiode, generating charge in response to incident light;
- with the potential barrier structure, transferring a first amount of the generated charge to the second charge storage region;
- activating the transfer transistor to transfer a second amount of the generated charge to the storage diode;
- transferring a portion of the second amount of the generated charge to the first charge storage region;
- and
- separately performing respective readout operations for the first amount of generated charge, the portion of the second amount of the generated charge, and a remaining portion of the second amount of the generated charge.
An image sensor pixel, comprising:
- a photosensitive region that generates charge in response to incident light;
- a floating diffusion region;
- a first charge storage structure coupled to a first path that connects the photosensitive region to the floating diffusion region;
- and
- a second charge storage structure coupled to a second path that connects the photosensitive region to the floating diffusion region, wherein a potential barrier structure is coupled along the second path and wherein the first and second paths are coupled in parallel between the photosensitive region and the floating diffusion region.
Dependencies are inferred from the claim text.