Image sensor with test light shielding pattern, imaging device, and method of manufacturing image sensor chip package

An imaging device comprising:

• an image sensor comprising a pixel array comprising at least one test element group (TEG) on which a test light-shielding pattern, different from a light-shielding pattern formed on a plurality of active pixels, is formed to detect a degree of misalignment between the plurality of active pixels and the light-shielding pattern;
• and
• an image signal processor configured to receive a plurality of accumulated charges from a plurality of photodiodes of the plurality of active pixels, and perform image processing on the plurality of accumulated charges,
• wherein:
• the at least one TEG is located adjacent to at least one of a left side and a right side of an active area,
• the at least one TEG comprises a plurality of first group dummy pixels from among a plurality of dummy pixels, the plurality of first group dummy pixels comprising a first dummy pixel, a second dummy pixel and a third dummy pixel located adjacent to at an upper side or a lower side of the at least one TEG,
• the test light-shielding pattern comprises a first test light-shielding pattern having a stepped shape in an up or down direction of the at least one TEG that is formed on the plurality of first group dummy pixels,
• the first test light-shielding pattern comprises a first test light-shielding structure formed on the first dummy pixel, a second test light-shielding structure formed on the second dummy pixel, and a third test light-shielding structure formed on the third dummy pixel, and
• the second test light-shielding structure is spaced apart by a first distance in a left or right direction of the at least one TEG from a first start line of the first test light-shielding structure, and the third test light-shielding structure is spaced apart by a second distance in the left or right direction of the at least one TEG from a second start line of the second test light-shielding structure.

A method of manufacturing an image sensor chip package, the method comprising:

• providing a wafer on which a plurality of semiconductor chips, each comprising at least one test element group (TEG) including a plurality of dummy pixels are formed;
• forming a light-shielding pattern on a plurality of active pixels of each of the plurality of semiconductor chips, and forming a test light-shielding pattern on the at least one TEG of each of the plurality of semiconductor chips;
• testing whether the light-shielding pattern of each of the plurality of semiconductor chips is aligned based on a plurality of pixel signals generated from the at least one TEG of each of the plurality of semiconductor chips;
• for any of the plurality of semiconductor chips on which the light-shielding pattern is not aligned, re-forming the light-shielding pattern of the semiconductor chip according to a test result;
• providing an individual image sensor chip by separating the plurality of semiconductor chips from the wafer;
• and
• packaging the individual image sensor chip,
• wherein:
• the at least one TEG is located adjacent to at least one of a left side and a right side of an active area,
• the at least one TEG comprises a plurality of first group dummy pixels from among the plurality of dummy pixels, the plurality of first group dummy pixels comprising a first dummy pixel, a second dummy pixel and a third dummy pixel located adjacent to at an upper side or a lower side of the at least one TEG,
• the test light-shielding pattern comprises a first test light-shielding pattern having a stepped shape in an up or down direction of the at least one TEG that is formed on the plurality of first group dummy pixels,
• the first test light-shielding pattern comprises a first test light-shielding structure formed on the first dummy pixel, a second test light-shielding structure formed on the second dummy pixel, and a third test light-shielding structure formed on the third dummy pixel, and
• the second test light-shielding structure is spaced apart by a first distance in a left or right direction of the at least one TEG from a first start line of the first test light-shielding structure, and the third test light-shielding structure is spaced apart by a second distance in the left or right direction of the at least one TEG from a second start line of the second test light-shielding structure.