Magnesium based gettering regions for gallium and nitrogen containing laser diode devices

An electronic apparatus comprising:

• a gallium and nitrogen containing laser diode device, the device comprising:
• a gallium and nitrogen containing substrate material comprising a surface region, the surface region being configured on either a non-polar {10-10} crystal orientation or a semi-polar ({10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction);
• a GaN region formed overlying the surface region;
• an active region formed overlying the surface region;
• a gettering region comprising a magnesium species overlying the surface region;
• a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region;
• and
• a package coupled to the gallium and nitrogen containing laser device.