Multi-wavelength semiconductor lasers
AssigneeHewlett Packard Enterprise Development LP
InventorsGeza Kurczveil, Di Liang, Raymond G. Beausoleil
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Abstract
Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.
Claims17
A multi-wavelength semiconductor laser, comprising:
- a silicon-on-insulator (SOI) substrate;
- a quantum dot (QD) layer above the SOI substrate, the QD layer including an active region, and at least one end of the QD layer having an angled junction;
- a waveguide included in an upper silicon layer of the SOI substrate, wherein the waveguide comprises multiple widths along the length of the waveguide;
- and
- a mode converter included in the waveguide to facilitate optical coupling of a lasing mode to the waveguide by forming tapers between the multiple widths of the waveguide such that an area of space in the waveguide between the tapers defines a laser cavity.
A multi-wavelength semiconductor laser, comprising:
- a waveguide included in a first silicon layer of a silicon-on-insulator (SOI) substrate, wherein the waveguide comprises multiple widths along the length of the waveguide;
- a quantum dot (QD) layer above the SOI substrate, the QD layer including an active gain region, and at least one end of the QD layer having a tapered junction;
- a mode converter comprising tapers in the waveguide between the multiple widths to couple a lasing mode to the waveguide by defining a laser cavity in an area of space in the waveguide between the tapers;
- and
- a first mirror and a second mirror.
Dependencies are inferred from the claim text.