Plasmonic quantum well laser
AssigneeInternational Business Machines Corporation
InventorsHeinz Schmid, Benedikt F. Mayer, Stephan Wirths, Kirsten Emilie Moselund
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Abstract
A plasmonic quantum well laser may be provided. The plasmonic quantum well laser includes a plasmonic waveguide and a p-n junction structure extends orthogonally to a direction of plasmon propagation along the plasmonic waveguide. Thereby, the p-n junction is positioned atop a dielectric material having a lower refractive index than material building the p-n junction, and the quantum well laser is electrically actuated. A method for building the plasmonic quantum well laser is also provided.
Claims15
A plasmonic quantum well laser comprising a plasmonic waveguide, said plasmonic quantum well laser comprising
- a p-n junction structure extending orthogonally to a direction of plasmon propagation along said plasmonic waveguide,
- wherein said p-n junction is positioned atop a dielectric material having a lower refractive index than material building said p-n junction, and
- wherein said plasmonic quantum well laser is electrically actuated.
A method for building a plasmonic quantum well laser, said method comprising providing an SiO2 layer over an Si bulk material, wherein an Si layer is deposited atop of said SiO2 layer;
- patterning an Si structure allotted for a gain region into said Si layer, such that said Si structure forms a pattern atop said SiO2 layer;
- covering said Si structure with an SiO2 template layer;
- building an opening in said SiO2 template layer from one side and etching away said Si pattern, saidreby building a cavity within said SiO2 template layer;
- epitaxially growing horizontally a first semiconductor portion of a p-n junction extending from a silicon seed exposed within said SiO2 template towards said opening until a predefined horizontal extension is reached;
- growing horizontally a second portion of said p-n junction through said opening extending from an end of said predefined horizontal extension facing said opening until said cavity is filled, such that said p-n junction builds said gain region of said plasmonic quantum well laser;
- depositing a dielectric material over said p-n junction;
- and
- depositing a plasmonic waveguide over said dielectric material along a longitudinal extension of said p-n junction.
Dependencies are inferred from the claim text.