Multi-negative differential resistance device and method of manufacturing the same
AssigneeResearch & Business Foundation Sungkyunkwan University
InventorsJin Hong Park, Jaewoo Shim, Hae Won Lee
Life of this patent
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Abstract
Provided is a multi-negative differential resistance device. The multi-negative differential resistance device includes a first negative differential resistance device and a second negative differential resistance device connected in parallel with the first negative differential resistance device, and a peak and a valley of the first negative differential resistance device and a peak and a valley of the second negative differential resistance device are synthesized, and, thus, the multi-negative differential resistance device has two peaks and two valleys.
Claims11
A multi-negative differential resistance device, comprising:
- a first negative differential resistance device;
- and
- a second negative differential resistance device connected in parallel with the first negative differential resistance device,
- wherein a peak and a valley of the first negative differential resistance device and a peak and a valley of the second negative differential resistance device, as synthesized, result in the multi-negative differential resistance device having two peaks and two valleys,
- wherein each of the first negative differential resistance device and the second negative differential resistance device includes a degenerated first semiconductor and a degenerated second semiconductor joined together.
A multi-negative differential resistance device,
- wherein N number of negative differential resistance devices are connected in parallel with each other, and
- peaks and valleys of the respective negative differential resistance devices, as synthesized, result in the multi-negative differential resistance device having N number of peaks and valleys, and
- each of the negative differential resistance devices includes a degenerated p-type semiconductor and a degenerated n-type semiconductor joined together and a resistance device connected to any one of the degenerated p-type semiconductor and the degenerated n-type semiconductor.
A method of manufacturing a multi-negative differential resistance device, comprising:
- forming N (N is a natural number of 2 or more) number of degenerated first polar semiconductor layers on a substrate;
- forming N number of degenerated second polar semiconductor layers to be joined to the degenerated first polar semiconductor layers;
- forming N number of resistive layers to be adjacent to the second polar semiconductor layers;
- forming N number of first electrodes in contact with the first polar semiconductor layers, N number of second electrodes in contact between the second polar semiconductor layers and the resistive layers and N number of third electrodes in contact with the resistive layers;
- and
- connecting the N number of first electrodes in parallel with the N number of third electrodes, respectively.
A method of manufacturing a multi-negative differential resistance device, comprising:
- forming N (N is a natural number of 2 or more) number of degenerated first polar semiconductor layers on a substrate;
- forming N number of second polar semiconductor layers to be joined to the degenerated first polar semiconductor layers;
- degenerating junction portions of the second polar semiconductor layers joined to the degenerated first polar semiconductor layers;
- forming N number of first electrodes in contact with the first polar semiconductor layers and N number of second electrodes in contact with non-degenerated portions of the second polar semiconductor layers;
- and
- connecting the N number of first electrodes in parallel with the N number of second electrodes, respectively.
Dependencies are inferred from the claim text.