Package to die connection system and method therefor
AssigneeNXP USA, Inc.
InventorsMark Douglas Hall, Walter J. Ciosek, David Russell Tipple
Life of this patent
Estimating the term…
Abstract
A package to die connection system and method are provided. The system includes a semiconductor device having a substrate with a top surface. A gasket is affixed to the top surface of the substrate and has at least one cavity with a portion of the cavity open to a sidewall of the gasket. A semiconductor die is attached to the top surface of the substrate. A sidewall of the semiconductor die is abutted with the sidewall of the gasket. A portion of a metal layer is exposed to the open portion of the cavity. A pillar located in the cavity is electrically connected to the exposed portion of the metal layer.
Claims20
A semiconductor device comprising:
- a substrate having a top surface;
- a gasket affixed to the top surface of the substrate, the gasket having at least one cavity with a portion of the at least one cavity open to a sidewall of the gasket;
- a semiconductor die attached to the top surface of the substrate, a sidewall of the semiconductor die abutted with the sidewall of the gasket and having a portion of a metal layer exposed to the open portion of the at least one cavity;
- and
- a pillar located in the at least one cavity and electrically connected to the exposed portion of the metal layer.
A semiconductor device comprising:
- a substrate having a top surface;
- a non-conductive gasket affixed to the top surface of the substrate, the non-conductive gasket having a first cavity with a first portion of the first cavity open to a first sidewall of the non-conductive gasket;
- a first semiconductor die having a portion of a first metal layer exposed through a sidewall, the first semiconductor die attached to the top surface of the substrate and abutted with the first sidewall of the non-conductive gasket such that the exposed portion of the first metal layer and the open first portion of the first cavity are collocated;
- and
- a first pillar located in the first cavity and electrically connected to the exposed portion of the first metal layer.
A method comprising:
- forming a first cavity in a first portion of a gasket, the first cavity having a first open portion on a first sidewall of the gasket and a second open portion on a second sidewall of the gasket;
- attaching the gasket to a top surface of a substrate;
- attaching a semiconductor die having a portion of a first metal layer exposed through a first sidewall to the top surface of the substrate and abutted with the first sidewall of the gasket, the exposed portion of the first metal layer collocated with the first open portion on the first sidewall of the gasket;
- and
- reflowing a pillar located in the first cavity to form an electrical connection with the exposed portion of the first metal layer.
Dependencies are inferred from the claim text.