US 10,559,626 B2Granted

Neuromorphic device including a synapse having carbon nano-tubes

AssigneeSK hynix Inc.

InventorsYong-Soo Choi, Keun Heo, Hyung-Dong Lee

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Abstract

A neuromorphic device is provided. The neuromorphic device may include a pre-synaptic neuron; a row line extending in a row direction from the pre-synaptic neuron; a post-synaptic neuron; a column line extending in a column direction from the post-synaptic neuron; and a synapse disposed at an intersection between the row line and the column line. The synapse may include a first synapse layer including a plurality of first carbon nano-tubes; a second synapse layer including a plurality of second carbon nano-tubes having different structures from the plurality of first carbon nano-tubes; and a third synapse layer including a plurality of third carbon nano-tubes having different structures from the plurality of first carbon nano-tubes and the plurality of second carbon nano-tubes.

Claims15

Dependent claims

A neuromorphic device comprising:

a pre-synaptic neuron;
a row line extending in a row direction from the pre-synaptic neuron;
a post-synaptic neuron;
a column line extending in a column direction from the post-synaptic neuron;
and
a synapse disposed at an intersection between the row line and the column line,
wherein the synapse comprises:
a first synapse layer including a plurality of first carbon nano-tubes;
a second synapse layer including a plurality of second carbon nano-tubes having different structures from the plurality of first carbon nano-tubes;
and
a third synapse layer including a plurality of third carbon nano-tubes having different structures from the plurality of first carbon nano-tubes and the plurality of second carbon nano-tubes,
wherein the synapse further comprises a capping layer disposed on the first to third synapse layers,
wherein the capping layer comprises a plurality of horizontal carbon nano-tubes that are densely and horizontally arranged in the capping layer, the plurality of horizontal carbon nano-tubes being arranged denser than the pluralities of the first to third carbon nano-tubes, and
wherein the first synapse layer, the second synapse layer, the third synapse layer, and the capping layer are vertically stacked and horizontally disposed in parallel with each other.

11 more elements

A neuromorphic device comprising:

a lower electrode;
an upper electrode;
a synapse disposed between the lower electrode and the upper electrode;
a first sidewall spacer;
and
a second sidewall spacer,
wherein the synapse includes:
a lower synapse layer having a plurality of first carbon nano-tubes;
a middle synapse layer having a plurality of second carbon nano-tubes;
and
an upper synapse layer having a plurality of third carbon nano-tubes,
wherein the lower synapse layer, the middle synapse layer, and the upper synapse layer are in parallel with each other, and
wherein the lower synapse layer, the middle synapse layer, and the upper synapse layer each contact the lower electrode and the upper electrode,
wherein the first sidewall spacer is disposed on an outer side surface of the lower electrode, and the second sidewall spacer is disposed on an outer side surface of the upper electrode,
wherein the outer side surface of the lower electrode is opposite to the outer side surface of the upper electrode,
wherein the synapse further comprises a capping layer disposed on the upper synapse layer, and
wherein the capping layer comprises a plurality of horizontal carbon nano-tubes that are densely and horizontally arranged in the capping layer, the plurality of horizontal carbon nano-tubes being arranged denser than the pluralities of the first to third carbon nano-tubes.

14 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/648,342Filed 12 Jul 2017
Priority: KR 10-2017-002201420 Feb 2017
Published: US 2018/0240846 A123 Aug 2018
Granted: 11 Feb 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

G06N 3/049
Architecture, e.g. interconnection topology: temporal neural networks, e.g. delay elements, oscillating neurons or pulsed inputs
B82Y 40/00
Manufacture or treatment of nanostructures
G06N 3/065
Using electronic means: analogue means
H10K 10/26
Organic diodes: diodes comprising organic-organic junctions