Power semiconductor device

A power semiconductor device comprising:

• an insulating substrate configured to include a first conductor layer and a second conductor layer provided respectively on opposite surfaces in a thickness direction of an insulating layer;
• a plurality of semiconductor elements joined to the first conductor layer via a first anchoring layer;
• an external connecting member having an element coupler and an external connection end, wherein the external connecting member is bent between the external connection end and the element coupler in the thickness direction, the element coupler extending along the first conductor layer with the semiconductor elements positioned between the external connecting member and the first conductor layer, and joined to the semiconductor elements via a second anchoring layer;
• and
• a frame member surrounding the plurality of semiconductor elements on the first conductor layer and joined to the first conductor layer via a third anchoring layer;
• wherein
• the frame member includes a fitting portion fitted to the external connection end,
• the external connecting member includes at least two projections extending toward the semiconductor elements, and
• the first conductor layer is positioned above the insulating layer, and the frame member is positioned entirely above the first conductor layer.