Method for obtaining patterns in a layer

A method for producing subsequent patterns in an underlying layer, the method comprising at least one step of producing prior patterns in a imprintable layer on top of the underlying layer, wherein the production of the prior patterns comprises nanoimprinting of the imprintable layer and leaves in place, at the bottom of the patterns, residual thicknesses of imprintable layer, the imprintable layer thus forming a continuous layer covering the underlying layer, comprising the following step:

• modifying the underlying layer via ion implantation in the underlying layer, the implantation being carried out through the imprintable layer comprising the prior patterns and said residual thicknesses), the parameters of the implantation comprise in particular an implantation direction and wherein the implantation direction is perpendicular to a main plan in which the underlying layer extends, the parameters of the implantation being chosen in such a way as to form, in the underlying layer, zones modified by the implantation and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns;
• wherein the step of producing prior patterns is carried out in such a way that for each of the patterns, the residual thickness of the imprintable layer is less than the minimum implantation depth of the ions implanted during said implantation, the minimum depth being taken in the implantation direction and starting from the surface of the imprintable layer
• wherein the implantation of ions is carried out in such a way that the underlying layer has a continuous non-modified zone located between the modified zones and a face of the underlying layer through which the ions penetrate during the implantation;
• and
• after the modification step, at least one step of removing the modified zones carried out selectively with respect to the non-modified zones, in such a way as to leave in place the non-modified zones.

The method for producing subsequent patterns in an underlying layer, the method comprising at least one step of producing prior patterns in a imprintable layer on top of the underlying layer, wherein the production of the prior patterns comprises nanoimprinting of the imprintable layer and leaves in place, at the bottom of the patterns, residual thicknesses of imprintable layer, the imprintable layer thus forming a continuous layer covering the underlying layer, comprising the following step:

• modifying the underlying layer via ion implantation in the underlying layer, the implantation being carried out through the imprintable layer comprising the prior patterns and said residual thicknesses), the parameters of the implantation comprise in particular an implantation direction and wherein the implantation direction is perpendicular to a main plan in which the underlying layer extends, the parameters of the implantation being chosen in such a way as to form, in the underlying layer, zones modified by the implantation and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns;
• wherein the step of producing prior patterns is carried out in such a way, that for each of the patterns, the residual thickness of the imprintable layer is less than the minimum implantation depth of the ions implanted during said implantation, the minimum depth being taken in the implantation direction and starting from the surface of the imprintable layer
• wherein the implantation of ions is carried out in such a way that the underlying layer has a continuous non-modified zone located between the modified zones and a face of the underlying layer through which the ions penetrate during the implantation, and
• wherein the underlying layer forms the active layer of a photovoltaic cell.

The method for producing subsequent patterns in an underlying layer, the method comprising at least one step of producing prior patterns in a imprintable layer on top of the underlying layer, wherein the production of the prior patterns comprises nanoimprinting of the imprintable layer and leaves in place, at the bottom of the patterns, residual thicknesses of imprintable layer, the imprintable layer thus forming a continuous layer covering the underlying layer, comprising the following step:

• modifying the underlying layer via ion implantation in the underlying layer, the implantation being carried out through the imprintable layer comprising the prior patterns and said residual thicknesses), the parameters of the implantation comprise in particular an implantation direction and wherein the implantation direction is perpendicular to a main plan in which the underlying layer extends, the parameters of the implantation being chosen in such a way as to form, in the underlying layer, zones modified by the implantation and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns;
• wherein the step of producing prior patterns is carried out in such a way that for each of the patterns, the residual thickness of the imprintable layer is less than the minimum implantation depth of the ions implanted during said implantation, the minimum depth being taken in the implantation direction and starting from the surface of the imprintable layer
• wherein the implantation of ions is carried out in such a way that the underlying layer has a continuous non-modified zone located between the modified zones and a face of the underlying layer through which the ions penetrate during the implantation, and
• wherein the underlying layer is a substrate made of sapphire and forms, together with the subsequent patterns, a patterned sapphire substrate (PSS).

A method for manufacturing a light-emitting diode (LED) comprising a patterned sapphire substrate (PSS), wherein the patterned sapphire substrate (PSS) is obtained by the method for producing subsequent patterns in an underlying layer, the method comprising at least one step of producing prior patterns in a imprintable layer on top of the underlying layer, wherein the production of the prior patterns comprises nanoimprinting of the imprintable layer and leaves in place, at the bottom of the patterns, residual thicknesses of imprintable layer, the imprintable layer thus forming a continuous layer covering the underlying layer, comprising the following step:

• modifying the underlying layer via ion implantation in the underlying layer, the implantation being carried out through the imprintable layer comprising the prior patterns and said residual thicknesses), the parameters of the implantation comprise in particular an implantation direction and wherein the implantation direction is perpendicular to a main plan in which the underlying layer extends, the parameters of the implantation being chosen in such a way as to form, in the underlying layer, zones modified by the implantation and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns;
• wherein the step of producing prior patterns is carried out in such a way that for each of the patterns, the residual thickness of the imprintable layer is less than the minimum implantation depth of the ions implanted during said implantation, the minimum depth being taken in the implantation direction and starting from the surface of the imprintable layer
• wherein the implantation of ions is carried out in such a way that the underlying layer has a continuous non-modified zone located between the modified zones and a face of the underlying layer through which the ions penetrate during the implantation, and
• wherein the underlying layer is a substrate made of sapphire and forms, together with the subsequent patterns, a patterned sapphire substrate (PSS).