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AssigneeTrumpf Photonics, Inc.
InventorsCarlo Holly, Stefan Heinemann, Suhit Ranjan Das, Prasanta Modak
Estimating the term…
A semiconductor laser diode includes multiple layers stacked along a first direction, in which the multiple layers include: a first multiple of semiconductor layers; an optical waveguide on the first multiple of semiconductor layers, in which the optical waveguide includes a semiconductor active region for generating laser light, and in which the optical waveguide defines a resonant cavity having an optical axis; and a second multiple of semiconductor layers on the optical waveguide region, in which a resistivity profile of at least one layer of the multiple layers varies gradually between a maximum resistivity and a minimum resistivity along a second direction extending orthogonal to the first direction, in which a distance between the maximum resistivity and the minimum resistivity is greater than at least about 2 microns.
A semiconductor laser diode comprising a plurality of layers stacked along a first direction, wherein the plurality of layers comprises:
A method of fabricating a semiconductor laser diode, the method comprising:
Dependencies are inferred from the claim text.