Buried activated p-(Al,In)GaN layers
AssigneeGallium Enterprises Pty Ltd
InventorsIan Mann, Satyanarayan Barik, Joshua David Brown, Danyu Liu
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Abstract
Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.
Claims29
A method of fabrication a semiconductor structure comprising a buried activated magnesium-doped p-(Al,In)GaN layer, comprising:
- (a) exposing a magnesium-doped p-(Al,In)GaN layer to a gaseous mixture comprising NH3 or H2, or a combination thereof for less than 5 minutes at a temperature greater than 600° C., wherein the gaseous mixture has a partial pressure of H2 less than 760 Torr, to provide an exposed magnesium-doped p-(Al,In)GaN layer;
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- (b) growing a semiconductor layer on the exposed magnesium-doped p-(Al,In)GaN layer in an environment wherein the partial pressure of H2 is greater than a partial pressure of N2 or a partial pressure of N2 is greater than a partial pressure of H2, to provide a semiconductor structure comprising a buried activated p-(Al,In)GaN layer.
A method of fabricating a semiconductor structure comprising a buried activated magnesium-doped p-(Al,In)GaN layer, comprising:
- (a) exposing a magnesium-doped p-(Al,In)GaN layer to an N2 plasma in a gaseous mixture, wherein the gaseous mixture has a partial pressure of H2 less than 760 Torr, to provide an exposed magnesium-doped p-(Al,In)GaN layer;
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- (b) growing a semiconductor layer on the exposed magnesium-doped p-(Al,In)GaN layer in an environment wherein the partial pressure of H2 is greater than a partial pressure of N2 or a partial pressure of N2 is greater than a partial pressure of H2, to provide a semiconductor structure comprising a buried activated p-(Al,In)GaN layer.
A method of fabricating a semiconductor structure comprising a buried activated magnesium-doped p-(Al, In)GaN layer, comprising:
- (a) exposing a magnesium-doped p-(Al,In)GaN layer to a gaseous mixture comprising NH3 or H2, or a combination thereof, wherein the gaseous mixture has a partial pressure of H2 less than 760 Torr, to provide an exposed magnesium-doped p-(Al,In)GaN layer;
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- (b1) growing an (Al,In)GaN layer in an environment wherein a the partial pressure of N2 is greater than the partial pressure of H2;
- and
- (b2) growing an n-(Al,In)GaN layer on the (Al,In)GaN layer in an environment wherein a partial pressure of H2 is greater than a the partial pressure of N2, to provide a semiconductor structure comprising a buried activated magnesium-doped p-(Al,In)GaN layer.
Dependencies are inferred from the claim text.