Manifolded gate resistance network
AssigneeSkyworks Solutions, Inc.
InventorsPeter Harris Robert Popplewell, Ambarish Roy, Guillaume Alexandre Blin
Life of this patent
Estimating the term…
Abstract
A radio-frequency switch includes a pole node, a throw node connected to the pole node via a radio-frequency signal path, the radio-frequency signal path including first, second, third and fourth field-effect transistors connected in series, each of the first, second, third and fourth field-effect transistors having a gate, a first coupling path coupling the gate of the first field-effect transistor to the gate of the second field-effect transistor, a second coupling path coupling the gate of the third field-effect transistor to the gate of the fourth field-effect transistor, and a third coupling path coupling the first coupling path to the second coupling path.
Claims20
A radio-frequency switch comprising:
- a pole node;
- a throw node connected to the pole node via a radio-frequency signal path coupled between the pole node and the throw node, the radio-frequency signal path including first, second, third and fourth field-effect transistors connected in series between the pole node and the throw node, each of the first, second, third and fourth field-effect transistors having a gate;
- a first coupling path coupling the gate of the first field-effect transistor to the gate of the second field-effect transistor;
- a second coupling path coupling the gate of the third field-effect transistor to the gate of the fourth field-effect transistor;
- and
- a third coupling path coupling the first coupling path to the second coupling path.
A radio-frequency switch comprising:
- a pole node;
- a throw node connected to the pole node via a radio-frequency signal path coupled between the pole node and the throw node;
- a shunt arm connected between the radio-frequency signal path and a ground reference, the shunt arm including first, second, third and fourth field-effect transistors connected in series between the radio-frequency signal path and the ground reference, each of the first, second, third and fourth field-effect transistors having a gate node;
- a first coupling path coupling the gate of the first field-effect transistor to the gate of the second field-effect transistor;
- a second coupling path coupling the gate of the third field-effect transistor to the gate of the fourth field-effect transistor;
- and
- a third coupling path coupling the first coupling path to the second coupling path.
A radio-frequency switch comprising:
- a pole node connected to a first throw node via a first radio-frequency signal path, the first radio-frequency signal path including a first plurality of field-effect transistors connected in series between the pole node and the first throw node;
- a second throw node connected to the pole node via a second radio-frequency signal path, the second radio-frequency signal path including a second plurality of field-effect transistors connected in series between the pole node and the second throw node;
- a first shunt arm connected to the first radio-frequency signal path at a first shunt node, the first shunt arm including a third plurality of field-effect transistors connected in series between the first radio-frequency signal path and a ground reference;
- a second shunt arm connected to the second radio-frequency signal path including a fourth plurality of field-effect transistors connected in series between the second radio-frequency signal path and the ground reference;
- and
- a first manifolded gate resistance network connected to either the first plurality of field-effect transistors or the second plurality of field-effect transistors.
Dependencies are inferred from the claim text.