Surface-emitting device, vertical external-cavity surface-emitting laser, and method for manufacturing surface-emitting device

A vertical external-cavity surface-emitting laser comprising:

• an optical resonator including
• a surface-emitting device for an excitation medium, and
• a resonant mirror, and
• an excitation light source,
• said surface-emitting device including
• a base substrate made of GaN and c-axis oriented, and
• an emitter structure formed of a group 13 nitride semiconductor and provided on said base substrate,
• wherein
• said base substrate is an oriented polycrystalline free-standing substrate,
• said emitter structure is formed of a plurality of unit deposition parts, and each of said plurality of unit deposition parts is provided on said base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer having a multiple quantum well structure,
• said excitation light source irradiates said active layer of said surface-emitting device with excitation laser light to cause said active layer to generate excitation emission,
• a c-axis orientation of each of said plurality of unit deposition parts conforms to the c-axis orientation of said base substrate located directly below said plurality of unit deposition parts,
• grooves are formed between said plurality of unit deposition parts, wherein the grooves are formed at random positions, and
• said resonant mirror resonates the excitation emission generated in said active layer between said DBR layer of said surface-emitting device and said resonant mirror.

A method for manufacturing a surface-emitting device for an excitation medium of a vertical external-cavity surface-emitting laser, the method comprising the steps of:

• (a) preparing a base substrate made of GaN and c-axis oriented;
• and
• (b) forming an emitter structure formed of a group 13 nitride semiconductor on said base substrate,
• wherein said base substrate is an oriented polycrystalline free-standing substrate,
• in said step (b), said emitter structure is formed such that
• said emitter structure includes
• a plurality of unit deposition parts, each of which is provided on said base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer that has a multiple quantum well structure and generates excitation emission in response to irradiation with external laser light, and
• grooves formed between said plurality of unit deposition parts, wherein the grooves are formed at random positions, and
• a c-axis orientation of each of said plurality of unit deposition parts conforms to the c-axis orientation of said base substrate located directly below said plurality of unit deposition parts.

A surface-emitting device comprising:

• a base substrate made of GaN and c-axis oriented;
• and
• an emitter structure formed of a group 13 nitride semiconductor and provided on said base substrate,
• wherein
• said base substrate is an oriented polycrystalline free-standing substrate,
• said emitter structure is formed of a plurality of unit deposition parts, and each of said plurality of unit deposition parts is provided on said base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer that has a multiple quantum well structure and generates excitation emission in response to irradiation with external laser light,
• a c-axis orientation of each of said plurality of unit deposition parts conforms to the c-axis orientation of said base substrate located directly below said plurality of unit deposition parts, and
• grooves are formed between said plurality of unit deposition parts, wherein the grooves are formed at random positions.