Magnetic random access memory and manufacturing method thereof

A method of manufacturing a semiconductor device including a magnetic random access memory (MRAM) cell, the method comprising:

• forming a first conductive layer over a first interlayer dielectric (ILD) layer;
• forming a stacked layer for a magnetic tunnel junction (MTJ) stack over the first conductive layer;
• forming a second conductive layer over the stacked layer;
• patterning the second conductive layer, the stacked layer and the first conductive layer, thereby forming an MRAM cell structure including a bottom electrode formed by the first conductive layer, the magnetic tunnel junction (MTJ) stack and a top electrode formed by the second conductive layer;
• forming a first insulating cover layer over the MRAM cell structure;
• forming a second insulating cover layer over the first insulating cover layer;
• forming a third insulating cover layer over the second insulating cover layer;
• forming a second ILD layer;
• forming a contact opening in the second ILD layer, thereby exposing the third insulating cover layer;
• removing a part of the third insulating cover layer, a part of the second insulating cover layer and a part of the first insulating cover layer, thereby exposing the top electrode;
• and
• forming a third conductive layer in the opening contacting the top electrode,
• wherein the second insulating cover layer has an oxygen getter property.

A method of manufacturing a semiconductor device, the method comprising:

• forming a bottom electrode in a bottom interlayer dielectric (ILD) layer;
• forming a film stack including a seed layer, a magnetic tunnel junction (MTJ) stack and a upper electrode layer;
• patterning the upper electrode layer and the MTJ stack, thereby forming a patterned stack;
• forming a first insulating cover layer over the seed layer and the patterned stack;
• forming a second insulating cover layer over the first insulating cover layer;
• patterning the second insulating cover layer, the first insulating cover layer and the seed layer, thereby forming a magnetic random access memory (MRAM) cell structure;
• forming an upper ILD layer over the MRAM cell structure;
• forming a contact opening in the ILD layer, thereby exposing the second insulating cover layer;
• and
• forming a conductive layer in the opening contacting the top electrode,
• wherein the second insulating cover layer has an oxygen getter property.