Monolithic integration of heterojunction solar cells
AssigneeInternational Business Machines Corporation
InventorsStephen W. Bedell, Bahman Hekmatshoartabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
Life of this patent
Estimating the term…
Abstract
A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.
Claims18
A device with integrated photovoltaic cells, comprising:
- a semiconductor substrate including doped alternating regions with opposite conductivity, and isolation regions each including a dielectric material formed only between respective pairs of the doped alternating regions;
- at least one doped layer formed over a first side of the semiconductor substrate, the at least one doped layer including a doped hydrogenated amorphous layer having a dopant concentration than a dopant concentration doped alternating regions;
- and
- conductive islands including a patterned conductive material formed directly on the at least one doped layer such that the conductive islands are aligned with the doped alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.
A device with integrated photovoltaic cells, comprising:
- a semiconductor substrate including doped alternating regions with opposite conductivity, and isolation regions each including a dielectric material formed only between respective pairs of the doped alternating regions;
- a first doped hydrogenated amorphous layer having a dopant concentration greater than a dopant concentration of the doped alternating regions formed over a first side of the semiconductor substrate;
- first conductive islands including a patterned conductive material formed over the first doped layer such that the first conductive islands are aligned with the doped alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure;
- and
- a second doped hydrogenated amorphous layer formed over a second side of the semiconductor substrate.
A device with integrated photovoltaic cells, comprising:
- a semiconductor substrate including doped alternating regions with opposite conductivity, and isolation regions each including a dielectric material formed only between respective pairs of the doped alternating regions;
- a first doped hydrogenated amorphous layer having a dopant concentration greater than a dopant concentration of the cloned alternating regions formed over a first side of the semiconductor substrate;
- and
- first conductive islands including a patterned conductive material formed on the first doped hydrogenated amorphous layer such that the first conductive islands are aligned with the doped alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.
Dependencies are inferred from the claim text.