2D material photo-detector gain and responsivity control and enhancement through induced interface trap doping
AssigneeThe United States of America as represented by the Secretary of the Army
InventorsSina Najmaei, Madan Dubey
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Abstract
A method for controlling any of a responsivity, response time, and trap characteristics of a two-dimensional (2D) material on a self-assembled monolayers (SAMs) device, the method including modifying a surface of an oxide substrate, in an atomic scale, to create the 2D material, wherein the modifying the surface includes modifying a level of impurities trapped in the surface and a doping level of the surface, and forming charge carrier traps at the surface, wherein a capture rate and an emission rate of the charge carrier is influenced by an exposure to a light signal, and wherein the exposure to the light signal further changes the doping level of the surface.
Claims19
A device comprising:
- a substrate;
- an oxide layer grown on said substrate;
- a layer of self-assembled monolayers (SAMs) formed on said oxide layer;
- and
- a layer of two dimensional (2D) material applied to a surface of the layer of SAMs,
- wherein an interface of the 2D material layer and SAMs layer traps impurities and charge carriers, such that a capture rate and an emission rate of said trapped charge carriers are capable of being influenced by exposure to light to change a doping level of said interface.
A method of forming a device comprising:
- growing an oxide layer grown on a substrate;
- forming a layer of self-assembled monolayers (SAMs) on said oxide layer;
- and
- applying a layer of two dimensional (2D) material to a surface of the layer of SAMs,
- wherein an interface of the 2D material layer and SAMs layer traps impurities and charge carriers such that a capture rate and an emission rate of said trapped charge carriers are capable of being influenced by exposure to light to change a doping level of said interface.
Dependencies are inferred from the claim text.