Method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorTomoaki Moriwaka
Life of this patent
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Abstract
The invention relates to a method for forming a uniform silicide film using a crystalline semiconductor film in which orientation of crystal planes is controlled, and a method for manufacturing a thin film transistor with less variation in electric characteristics, which is formed over an insulating substrate using the silicide film. A semiconductor film over which a cap film is formed is irradiated with a laser to be crystallized under the predetermined condition, so that a crystalline semiconductor film including large grain crystals in which orientation of crystal planes is controlled in one direction is formed. The crystalline semiconductor film is used for silicide, whereby a uniform silicide film can be formed.
Claims16
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film comprising amorphous silicon over a substrate;
- emitting a first laser beam having a length along a first direction and a width along a second direction, the first laser beam including TEM00 mode;
- shaping the first laser beam to a second laser beam having a linear shape, wherein the step of shaping includes:
- modifying the first laser beam along the first direction by using a first cylindrical lens;
- and
- modifying the first laser beam along the second direction by using a second cylindrical lens,
- scanning a first region of the semiconductor film with the second laser beam to crystallize the first region by moving the substrate along a direction perpendicular to the first direction;
- moving the substrate along the first direction after the step of scanning the first region;
- scanning a second region of the semiconductor film with the second laser beam to crystallize the second region by moving the substrate along the direction perpendicular to the first direction;
- etching the crystallized semiconductor film to form at least a first semiconductor island for an n-channel transistor and a second semiconductor island for a p-channel transistor;
- adding a first impurity ion having an n-type conductivity into the first semiconductor island and the second semiconductor island to form a first pair of impurity regions in the first semiconductor island and a second pair of impurity regions in the second semiconductor island;
- and
- adding a second impurity ion having a p-type conductivity selectively into the second semiconductor island to form a source region and a drain region of the p-channel transistor.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film comprising amorphous silicon over a substrate;
- emitting a first laser beam having a length along a first direction and a width along a second direction, the first laser beam including TEM00 mode;
- irradiating the semiconductor film with the first laser beam to crystallize the semiconductor film;
- forming a gate electrode over the semiconductor film after irradiating the semiconductor film with the first laser beam;
- adding an impurity into a first region of the semiconductor film;
- and
- heating the semiconductor film after adding the impurity into the first region of the semiconductor film,
- wherein the gate electrode and the first region of the semiconductor film overlap each other.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film comprising amorphous silicon over a substrate;
- forming a cap film over the semiconductor film;
- emitting a first laser beam having a length along a first direction and a width along a second direction, the first laser beam including TEM00 mode;
- irradiating the semiconductor film with the first laser beam through the cap film to crystallize the semiconductor film;
- forming a gate electrode over the semiconductor film after irradiating the semiconductor film with the first laser beam;
- adding an impurity into a first region of the semiconductor film;
- and
- heating the semiconductor film after adding the impurity into the first region of the semiconductor film,
- wherein the gate electrode and the first region of the semiconductor film overlap each other.
Dependencies are inferred from the claim text.