Semiconductor device with dummy hole

A semiconductor device, comprising:

• a base substrate;
• a plurality of gate lines;
• a first thin-film transistor which is provided on the base substrate, and includes a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor material;
• a second thin-film transistor which is provided on the base substrate, and includes a second input electrode, a second output electrode, a second control electrode directly connected to a gate line of the plurality of gate lines, and a second semiconductor pattern including an oxide semiconductor material;
• and
• a first insulating layer provided on the first semiconductor pattern and below the second semiconductor pattern;
• and
• a second insulating layer provided on the second semiconductor pattern, wherein at least one dummy hole is defined to penetrate through the first insulating layer and the second insulating layer, and
• in a plan view, the at least one dummy hole is not overlapped with the first and second thin-film transistors and is closer to the second semiconductor pattern than to the first semiconductor pattern, and
• wherein the at least one dummy hole is not filled with a conductive material and provided to meet following inequality 1:
• 2 micrometers×2 micrometers≤X micrometer2≤2 micrometers×Y micrometer,[Inequality 1]
• where X is a total planar area of the at least one dummy hole, and
• Y is a length of the second semiconductor pattern, wherein Y is equal to or shorter than about 20 micrometers.