Stress induction in 3D device channel using elastic relaxation of high stress material
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Nicolas J. Loubet, Xin Miao, Alexander Reznicek
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Abstract
A method for inducing stress in a device channel includes forming a stress adjustment layer on a substrate, the stress adjustment layer including an as deposited stress due to crystal lattice differences with the substrate. A device channel layer is formed on the stress adjustment layer. Cuts are etched through the device channel layer and the stress adjustment layer to release the stress adjustment layer to induce stress in the device channel layer. Source/drain regions are formed adjacent to the device channel layer.
Claims20
A method for inducing stress in a device channel, comprising:
- forming a device channel layer on a strain adjustment layer including Si3P4, wherein the device channel layer includes alternating layers of channel layers and stress adjustment layers, and wherein the stress adjustment layers include same materials as the strain adjustment layer;
- and
- etching fins into the device channel layer and the strain adjustment layer to release the strain adjustment layer to induce stress in the device channel layer.
A method for inducing stress in a device channel, comprising:
- forming a strain adjustment layer including Si3P4 on a substrate, the strain adjustment layer including an as deposited stress due to crystal lattice differences with the substrate;
- forming a device channel layer on the strain adjustment layer, wherein the device channel layer includes alternating layers of channel layers and stress adjustment layers, and wherein the stress adjustment layers include same materials as the strain adjustment layer;
- and
- forming fins in the device channel layer on the strain adjustment layer such that the strain adjustment layer is released to induce stress in the device channel layer.
A semiconductor device having compressive stress in a device channel, comprising:
- fins on a substrate, the fins including:
- a Si3P4 strain adjustment layer formed on the substrate;
- and
- a device channel layer formed on the Si3P4 strain stress adjustment layer, the device channel layer including a compressive stress induced by the Si3P4 strain stress adjustment layer, wherein the device channel layer includes alternating layers of channel layers and stress adjustment layers, and wherein the stress adjustment layers include same materials as the Si3P4 strain adjustment layer.
Dependencies are inferred from the claim text.