Method for depositing a group IV semiconductor and related semiconductor device structures
AssigneeASM IP Holding B.V.
InventorsJohn Tolle, Joe Margetis
Life of this patent
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Abstract
A method for depositing a Group IV semiconductor on a surface of a substrate is disclosed. The method may include: providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The methods may further include: exposing the substrate to at least one Group IV precursor and exposing the substrate to at least one Group IIIA dopant precursor; wherein the at least one Group IIIA dopant precursor comprises a borohydride, an organic borohydride, a halide, or an organohalide. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.
Claims15
A method of depositing a Group IV semiconductor on a surface of a substrate comprising;
- providing a substrate within a reaction chamber;
- heating the substrate to a deposition temperature;
- exposing the substrate to at least one Group IV precursor;
- and
- exposing the substrate to at least one Group IIIA dopant precursor, wherein the at least one Group IIIA dopant precursor comprises at least one of:
- a borohydride, and an organic borohydride, a halide, or an organohalide;
- wherein exposing the substrate to the at least one Group IV precursor and exposing the substrate to the at least one Group IIIA dopant precursor are performed at the same time such that the at least one Group IV precursor and the at least one Group IIIA dopant precursor flow into the reaction chamber at the same time;
- wherein a dopant species is incorporated into the Group IV semiconductor as the Group IV semiconductor is deposited.
Dependencies are inferred from the claim text.