Semiconductor device and method for manufacturing same

A semiconductor device comprising:

• a sidewall insulating film above a semiconductor substrate;
• a gate insulating film including side surfaces and a bottom surface, the side surfaces connecting with the bottom surface to define a region;
• a gate electrode formed in the region, the gate electrode comprising a metal material;
• source and drain regions in the semiconductor substrate;
• a first stress applying film above the semiconductor substrate;
• and
• a second stress applying film formed above the semiconductor substrate and outside of the first stress applying film, wherein
• the first stress applying film and the second stress applying film have a same stress type,
• the first stress applying film and the second stress applying film are formed of a same material, and
• in a cross section perspective, an uppermost surface of the first stress applying film and an uppermost surface of the second stress applying film are at the same height.