Fabrication of a vertical fin field effect transistor with an asymmetric gate structure
AssigneeInternational Business Machines Corporation
InventorsShogo Mochizuki, Junli Wang
Life of this patent
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Abstract
A method of forming a vertical fin field effect transistor (vertical finFET) with two concentric gate structures, including forming one or more tubular vertical fins on a substrate, forming a first gate structure around an outer wall of at least one of the one or more tubular vertical fins, and forming a second gate structure within an inner wall of at least one of the one or more tubular vertical fins having the first gate structure around the outer wall.
Claims20
A method of forming a vertical fin field effect transistor (vertical finFET) with two concentric gate structures, comprising:
- forming an outer gate structure around an outer wall of a tubular vertical fin, wherein the tubular vertical fin is directly in contact with a semiconductor substrate;
- and
- forming an inner gate structure on an inner bottom spacer within an inner wall of the tubular vertical fin.
A method of forming a vertical fin field effect transistor (vertical finFET) with two concentric gate structures, comprising:
- forming a doped region in a substrate below a tubular vertical fin;
- forming an outer gate structure on an outer bottom spacer on the substrate around an outer wall of the tubular vertical fin, wherein the outer bottom spacer provides electrical isolation between the doped region and the outer gate structure;
- and
- forming an inner gate structure on an inner bottom spacer within an inner wall of the tubular vertical fin, wherein the inner bottom spacer provides electrical isolation between the doped region and the inner gate structure.
A vertical fin field effect transistor (vertical finFET) with a concentric gate structure, comprising:
- a tubular vertical fin directly in contact with a doped region in a semiconductor substrate;
- an outer bottom spacer around an outer wall of the tubular vertical fin;
- an outer gate structure on the outer bottom spacer and the outer wall of the tubular vertical fin;
- an inner bottom spacer within an inner wall of the tubular vertical fin;
- and
- an inner gate structure on the inner bottom spacer and the inner wall of the tubular vertical fin.
Dependencies are inferred from the claim text.