Forming stacked nanowire semiconductor device
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Xin Miao, Peng Xu, Chen Zhang
Life of this patent
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Abstract
A method of making a vertical transistor device includes forming a front gate and a back gate opposite a major surface of a substrate. The front gate and the back gate are symmetric and arranged on opposing sides of a channel between the front gate and the back gate. The channel extends from a drain to a source. The method includes disposing a mask to cover the front gate and removing the back gate. The method further includes replacing the back gate with a layer of insulator and another back gate stack. The another back gate stack only covers a junction between the channel and the source, and remaining portions of the back gate are the layer of insulator.
Claims18
A vertical transistor device, comprising:
- a drain arranged on a substrate;
- a channel extending vertically from the drain to a source;
- a front gate stack arranged on one side of the channel, the front gate stack contacting the source, the channel, and the drain;
- and
- a back gate stack arranged on an opposite side of the channel, the back gate stack being arranged on an insulator layer and having a vertical thickness that is smaller than a vertical thickness of the front gate stack;
- wherein the front gate stack and the back gate stack comprise different metals.
A vertical transistor device, comprising:
- a drain arranged on a substrate;
- a channel extending vertically from the drain to a source;
- a front gate stack arranged on one side of the channel, the front gate stack contacting the source, the channel, and the drain;
- and
- a back gate stack arranged on an opposite side of the channel, the back gate stack being arranged on an insulator layer and having a vertical thickness that is smaller than a vertical thickness of the front gate stack, a top surface of the insulator layer being below a source-channel junction;
- wherein the front gate stack and the back gate stack comprise different metals.
Dependencies are inferred from the claim text.