Semiconductor device with termination structure including field zones and method of manufacturing
AssigneeInfineon Technologies AG
InventorsRudolf Elpelt, Roland Rupp, Reinhold Schoerner, Larissa Wehrhahn-Kilian, Bernd Zippelius
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Abstract
In termination regions of a silicon carbide substrate field zones are formed by ion implantation. By laterally modulating a distribution of dopants entering the silicon carbide substrate by the ion implantation, a horizontal net dopant distribution in the field zones is set to fall from a maximum net dopant concentration Nmax to Nmax/e within at least 200 nm, with e representing Euler's number. The field zones form first pn junctions with a drift layer.
Claims28
A method of manufacturing semiconductor devices, the method comprising:
- forming, by ion implantation, field zones of a second conductivity type that form first pn junctions with a drift layer in termination regions of a silicon carbide substrate of a first conductivity type;
- and
- laterally modulating a distribution of dopants entering the silicon carbide substrate by the ion implantation, to set a horizontal net dopant distribution in at least one of the field zones to fall from a maximum net dopant concentration Nmax to Nmax/e within at least 200 nm, with e representing Euler's number.
A semiconductor device, comprising:
- a drift zone formed in a semiconductor portion of silicon carbide, the semiconductor portion comprising a central region and a termination region surrounding the central region, the drift zone being at a distance to a first surface of the semiconductor portion;
- and
- a plurality of field zones in the termination region, the field zones forming first pn junctions with the drift zone,
- wherein in at least one of the field zones, a horizontal net dopant distribution N(x) parallel to the first surface falls from a maximum value Nmax to Nmax/e within at distance of least 200 nm, with e representing Euler's number.
Dependencies are inferred from the claim text.