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US 10,541,323 B2Granted
High-voltage GaN high electron mobility transistors
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsTimothy E. Boles, Douglas Carlson, Anthony Kaleta
Life of this patent
Estimating the term…
Abstract
High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, gate-connected field plate, and source-connected field plate.
Claims37
A high electron-mobility transistor (HEMT) comprising:
- a buffer layer;
- a gallium-nitride conduction layer formed over the buffer layer;
- a barrier layer formed over the gallium-nitride conduction layer;
- a gate, source, and drain formed over the barrier layer;
- a first insulating layer formed in regions between the gate and drain and between the gate and source;
- a first gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer, wherein a combined thickness of the buffer layer and gallium-nitride layer is greater than approximately 4.5 μm and sidewalls of the gate are sloped outward between approximately 5 degrees and approximately 60 degrees;
- one or more additional gates that are connected with the gate to a common gate contact;
- one or more additional sources that are connected with the source to a common source contact;
- and
- one or more additional drains that are connected with the drain to a common drain contact.
7 more elements
A high electron-mobility transistor (HEMT) comprising:
- a buffer layer;
- a gallium-nitride conduction layer formed over the buffer layer;
- a barrier layer formed over the gallium-nitride conduction layer;
- a gate, source, and drain formed over the barrier layer;
- a first insulating layer formed in regions between the gate and drain and between the gate and source;
- a first gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer, wherein a combined thickness of the buffer layer and gallium-nitride layer is greater than approximately 4.5 μm and sidewalls of the gate are sloped outward between approximately 5 degrees and approximately 60degrees, wherein a length of the gate Lg is between 0.15 μm and 2 μm, and the HEMT is capable of withstanding reverse-bias voltages between 900 volts and approximately 1200 volts.
3 more elements
A high electron-mobility transistor (HEMT) comprising:
- a gallium-nitride conduction layer formed over the buffer layer;
- a barrier layer formed over the gallium-nitride conduction layer;
- a gate, source, and drain formed over the barrier layer;
- a first insulating layer formed in regions between the gate and drain and between the gate and source;
- a first gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer, wherein a combined thickness of the buffer layer and gallium-nitride layer is greater than approximately 4.5 μm and sidewalls of the gate are sloped outward between approximately 5 degrees and approximately 60degrees;
- and
- a cap layer formed of GaN located over the barrier layer.
4 more elements
A high electron-mobility transistor (HEMT) comprising:
- a buffer layer;
- a gallium-nitride conduction layer formed over the buffer layer;
- a barrier layer formed over the gallium-nitride conduction layer;
- a gate, source, and drain formed over the barrier layer;
- a first insulating layer formed in regions between the gate and drain and between the gate and source;
- and
- a first gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer, wherein a combined thickness of the buffer layer and gallium-nitride layer is greater than approximately 4.5 μm and sidewalls of the gate are sloped outward between approximately 5 degrees and approximately 60 degrees, wherein the gate-to-drain distance is between about 10 μm and about 20 μm and the gate is located closer to the source than to the drain.
4 more elements
A high electron-mobility transistor (HEMT) comprising:
- a buffer layer;
- a gallium-nitride conduction layer formed over the buffer layer;
- a barrier layer formed over the gallium-nitride conduction layer;
- a gate, source, and drain formed over the barrier layer;
- a first insulating layer formed in regions between the gate and drain and between the gate and source;
- a first gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer, wherein a combined thickness of the buffer layer and gallium-nitride layer is greater than approximately 4.5 μm and sidewalls of the gate are sloped outward between approximately 5 degrees and approximately 60 degrees;
- and
- a second gate-connected field plate electrically connected to the gate and extending beyond edges of the first gate-connected field plate toward the drain and source over a second insulating layer.
5 more elements
A high electron-mobility transistor (HEMT) comprising:
- a buffer layer;
- a gallium-nitride conduction layer formed over the buffer layer;
- a barrier layer formed over the gallium-nitride conduction layer;
- a gate, source, and drain formed over the barrier layer;
- a first insulating layer formed in regions between the gate and drain and between the gate and source;
- a first gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer, wherein a combined thickness of the buffer layer and gallium-nitride layer is greater than approximately 4.5 μm and sidewalls of the gate are sloped outward between approximately 5 degrees and approximately 60degrees;
- a source-connected field plate comprising a conductor that is electrically connected to the source and extends over the gate;
- and
- a second insulating layer separating the source-connected field plate and the gate, wherein the source-connected field plate extends beyond the first gate-connected field plate.
6 more elements
Dependencies are inferred from the claim text.