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US 10,541,322 B2Granted
Semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorHajime Matsuda
Life of this patent
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Abstract
A nitride semiconductor device is disclosed. The semiconductor device includes a semiconductor stack with a top layer containing gallium (Ga) and nitrogen (N), electrodes of a source, a gate and a drain provided on the semiconductor stack, and a silicon nitride (SiN) film provided on the GaN layer between the drain electrode and the gate electrode but apart from the gate electrode. The SiN film has a silicon rich composition with a composition ratio of Si/N that is greater than 3/4 and substantial oxygen contents.
Claims9
A nitride semiconductor device, comprising:
- a substrate;
- a semiconductor stack that provides a top layer including gallium (Ga) and nitrogen (N);
- a gate electrode and a drain electrode each provided on the top layer of the semiconductor stack;
- and
- a first insulating film made of silicon nitride (SiN) provided on the top layer of the semiconductor stack between the gate electrode and the drain electrode, the first insulating film being apart from the gate electrode;
- wherein the first insulating film has composition with a composition ratio of silicon against nitrogen (Si/N) greater than 3/4, and
- wherein the top layer of the semiconductor stack in a portion in contact with the first insulating film has an oxygen content greater than an oxygen content in layers of the semiconductor stack below the top layer.
4 more elements
Dependencies are inferred from the claim text.