Semiconductor memory device and method for manufacturing the same

A semiconductor memory device, comprising:

• a substrate, wherein a first direction is perpendicular to a surface of the substrate, a second direction is parallel to the surface of the substrate, a third direction is crossing the first direction and the second direction, and the third direction is parallel to the surface of the substrate;
• a plurality of first insulating films provided above the substrate, the plurality of first insulating films being mutually separately arranged along the first direction and the second direction, and extending in the third direction, the direction of the longest dimension of each of the plurality of first insulating films being the third direction;
• an interconnect disposed between the first insulating films in the first direction and extending in the third direction, the direction of the longest dimension of the interconnect being the third direction;
• a plurality of electrodes disposed between the first insulating films in the first direction, and mutually separately arranged along the third direction, the electrodes being in direct contact with one of the first insulating films;
• a second insulating film disposed between the interconnect and the plurality of electrodes;
• a plurality of semiconductor members mutually separately arranged along the third direction between the first insulating films in the second direction and extending in the first direction, the direction of the longest dimension of each of the plurality of semiconductor members being the first direction, the electrode being disposed between the interconnect and one of the plurality of semiconductor members;
• and
• a third insulating film disposed between the plurality of electrodes and each of the semiconductor members and being thicker than the second insulating film.