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US 10,541,308 B2Granted
Gate cut device fabrication with extended height gates
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Andrew M. Greene, John R. Sporre, Peng Xu
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Abstract
Methods of forming semiconductor devices include forming a lower dielectric layer to a height below a height of a dummy gate hardmask disposed across multiple device regions. The dummy gate structure includes a dummy gate and a dummy gate hardmask. A protective layer is formed on the dielectric layer to the height of the dummy gate hardmask. The dummy gate hardmask is etched back to expose the dummy gate.
Claims20
A method of forming semiconductor devices comprising:
- forming a lower dielectric layer, using a first deposition process, to a height below a height of a dummy gate hardmask disposed across multiple device regions, wherein a dummy gate structure includes a dummy gate and the dummy gate hardmask;
- forming a protective layer on the dielectric layer, using a second deposition process that is different from the first deposition process, to the height of the dummy gate hardmask;
- and
- etching back the dummy gate hardmask to expose the dummy gate.
1 more element
A method of forming semiconductor devices comprising:
- forming a lower dielectric layer to a height below a height of a dummy gate hardmask disposed across multiple device regions, wherein a dummy gate structure includes a dummy gate and the dummy gate hardmask;
- forming a protective layer on the dielectric layer to the height of the dummy gate hardmask;
- etching back the dummy gate hardmask to expose the dummy gate;
- converting the protective layer to an upper dielectric layer;
- removing the dummy gate in one or more barrier regions;
- and
- forming a dielectric barrier in the one or more barrier regions.
4 more elements
Dependencies are inferred from the claim text.