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US 10,541,307 B2Granted
Diode with an oxygen concentration region
AssigneeKabushiki Kaisha Toshiba
InventorTatsuo Shimizu
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Abstract
A semiconductor device according to an embodiment includes a p-type SiC layer and a contact electrode electrically connected to the SiC layer. The contact electrode includes metal. And a region is provided in the SiC layer adjacent to the contact electrode. The region having an oxygen concentration not lower than 1×1016 cm−3 and not higher than 1×1021 cm−3.
Claims12
A semiconductor device comprising a diode:
- the diode comprising:
- a p-type SiC layer;
- an n-type SiC layer;
- a first electrode electrically connected to the p-type SiC layer, the first electrode including metal;
- a second electrode electrically connected to the n-type SiC layer, the p-type SiC layer and the n-type SiC layer being interposed between the first electrode and the second electrode, the n-type SiC layer being interposed between the p-type SiC layer and the second electrode:
- and
- a region provided in the p-type SiC layer, the region being in contact with the first electrode, the region being SiC including oxygen, the region having an oxygen concentration not lower than 1×1016 cm−3 and not higher than 1×1021 cm−3.
4 more elements
Dependencies are inferred from the claim text.