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US 10,541,304 B2Granted
Method for fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsChih-Kai Hsu, Ssu-I Fu, Yu-Hsiang Hung, Wei-Chi Cheng, Jyh-Shyang Jenq
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a spacer adjacent to the gate structure; forming a recess adjacent to the spacer; forming a buffer layer in the recess, wherein the buffer layer comprises a crescent moon shape; and forming an epitaxial layer on the buffer layer.
Claims10
A method for fabricating semiconductor device, comprising:
- providing a substrate;
- forming a gate structure on the substrate;
- forming a recess adjacent to the gate structure;
- forming a buffer layer in the recess, wherein the buffer layer comprises a crescent moon shape, the buffer layer comprises an inner curve and an outer curve intersect on a top surface of the substrate, and each of the inner curve and the outer curve comprises a completely curved surface;
- and
- forming an epitaxial layer on the buffer layer.
3 more elements
Dependencies are inferred from the claim text.