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US 10,541,303 B2Granted
Nanowire FinFET Transistor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAryan Afzalian, Blandine Duriez, Mark van Dal
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Abstract
Semiconductor devices and methods of forming the same are provided. A semiconductor device includes a substrate having a fin. A first nanowire is disposed on the fin and a second nanowire is disposed on the fin, the second nanowire being laterally separated from the first nanowire. A gate structure extends around the first nanowire and the second nanowire. The gate structure also extends over a top surface of the fin. The first nanowire, the second nanowire, and the fin form a channel of a transistor.
Claims20
A method, comprising:
- forming a first fin from a substrate, a base portion of the substrate surrounding the first fin;
- depositing a semiconductor material layer over the first fin, the semiconductor material layer extending down an end of the first fin and over the base portion of the substrate, the semiconductor material layer over the base portion of the substrate corresponding to a source/drain region;
- patterning the semiconductor material layer to expose a portion of the first fin from the semiconductor material layer and form a patterned semiconductor material layer;
- removing the first fin under the patterned semiconductor material layer, thereby exposing an underside of the patterned semiconductor material layer;
- and
- forming a gate stack wrapping around the patterned semiconductor material layer, the patterned semiconductor material layer being a channel region of a transistor.
3 more elements
A method, comprising:
- forming a first fin from a substrate;
- covering the first fin with a channel layer, the channel layer comprising a semiconductor material, wherein the channel layer extends over ends of the first fin;
- extending the semiconductor material over a portion of the substrate, thereby forming a first source/drain region;
- removing a portion of the channel layer to expose a portion of the first fin;
- etching the first fin to form a first opening under the channel layer, thereby exposing a bottom surface of the channel layer;
- and
- forming an all-around gate stack on a top surface of the channel layer and on the bottom surface of the channel layer.
4 more elements
A method comprising:
- forming a first semiconductor layer over a substrate, the first semiconductor layer having a smaller width than the substrate;
- depositing a second semiconductor material layer over the first semiconductor layer, the second semiconductor material layer extending along the sidewalls of the first semiconductor layer and along an upper surface of the substrate;
- patterning an upper surface of the second semiconductor material layer to form semiconductor strips over the first semiconductor material layer, a portion of the first semiconductor material layer being exposed between the semiconductor strips;
- etching the first semiconductor material layer between the semiconductor strips to remove a portion of the first semiconductor material layer in contact with an underside of the semiconductor strips;
- and
- forming a gate stack wrapping around the semiconductor strips.
3 more elements
Dependencies are inferred from the claim text.