Semiconductor structure having integrated inductor therein
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Che Lee, I-Nan Chen, Sheng-Chau Chen, Cheng-Hsien Chou, Cheng-Yuan Tsai
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Abstract
A semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; and a magnetic core in the second passivation layer; wherein the magnetic core includes a first magnetic material layer and a second magnetic material layer over the first magnetic material layer, the first magnetic material layer and the second magnetic material layer are separated by a high resistance isolation layer, and the high resistance isolation layer has a resistivity greater than about 1.3 ohm-cm.
Claims20
A magnetic core, comprising:
- a first magnetic material layer;
- a second magnetic material layer;
- a high resistance isolation;
- and
- a metal layer between the high resistance isolation layer and the second magnetic material layer;
- wherein the second magnetic material layer is over the first magnetic material layer, the first magnetic material layer and the second magnetic material layer are separated by the high resistance isolation layer, and the high resistance isolation layer has a resistivity greater than about 1.3 ohm-cm.
A magnetic core, comprising:
- a first magnetic material layer;
- a second magnetic material layer;
- and
- a composite isolation layer, including a high resistance isolation layer and a low resistance isolation layer;
- wherein the second magnetic material layer is over the first magnetic material layer, the first magnetic material layer and the second magnetic material layer are separated by the composite isolation layer, and the high resistance isolation layer has a resistivity greater than that of the low resistance isolation layer.
A magnetic core, comprising:
- a first magnetic material layer;
- a first low resistance isolation layer;
- a second magnetic material layer, over the first magnetic material layer;
- a high resistance isolation layer;
- a third magnetic material layer, over the second magnetic material layer;
- a second low resistance isolation layer;
- and
- a fourth magnetic material layer, over the third magnetic material layer;
- wherein the first magnetic material layer and the second magnetic material layer are separated by the first low resistance isolation layer, the second magnetic material layer and the third magnetic material layer are separated by the high resistance isolation layer, the third magnetic material layer and the fourth magnetic material layer are separated by the second low resistance isolation layer, and the high resistance isolation layer has a resistivity greater than that of the low resistance isolation layer.
Dependencies are inferred from the claim text.