Method for fabricating drive circuit and organic light-emitting diode display each having switching transistor without etch stopping layer on oxide semiconductor

A method for fabricating a drive circuit, comprising:

• providing a substrate;
• forming a first gate and a second gate on the substrate;
• forming a gate dielectric layer to cover the first gate and the second gate;
• forming a first semiconductor layer and a second semiconductor layer above the gate dielectric layer, wherein the first semiconductor layer corresponds to the first gate and is made of an oxide semiconductor material, and the second semiconductor layer corresponds to the second gate and is made of an oxide semiconductor material;
• forming, above the first semiconductor layer, an etch stopping layer;
• after the etch stopping layer is formed, forming a driving transistor by forming a first source and a first drain respectively on two sidewalls of the first semiconductor layer and two ends of the etch stopping layer;
• forming a switching transistor by forming a second source and a second drain respectively on two sides of the second semiconductor layer, wherein the first source of the driving transistor is disposed directly from one end of the etch stopping layer to one of the two sidewalls of the first semiconductor layer, wherein the first drain of the driving transistor is disposed directly from another end of the etch stopping layer to another sidewall of the first semiconductor layer, wherein both the first source and the first drain are in direct contact with the gate dielectric layer;
• and
• forming a dielectric layer to cover the driving transistor and the switching transistor.