Back to results
US 10,541,271 B2Granted
Superlattice-like switching devices
AssigneeMacronix International Co., Ltd.
InventorsHuai-Yu Cheng, Hsiang-Lan Lung, I-Ting Kuo
Life of this patent
Estimating the term…
Abstract
A voltage sensitive switching device is described having a superlattice-like cell structure comprising layers of ovonic materials, such as chalcogenide alloys. Memory cells can include the switching device, such as can be utilized in a cross-point memory.
Claims16
A switching device, comprising:
- a first electrode;
- a second electrode;
- and
- a superlattice-like stack of layers of ovonic materials between the first and second electrodes, wherein the stack of layers includes a plurality of sets of layers stacked periodically, at least two layers in each set in the plurality of sets being different chalcogenide alloys, in which a first layer in each set has a thickness less than 5 nm, and a second layer in each set has a thickness less than 5 nm, wherein the different chalcogenide alloys are different alloys containing Se.
1 more element
A memory device, comprising:
- a first electrode;
- a second electrode;
- a layer of programmable resistance material in contact with the first electrode;
- a stack of layers of ovonic materials in contact with the second electrode, wherein the stack of layers includes a plurality of sets of adjacent layers in the stack including a first layer and a second layer having different compositions, configured like a super-lattice in which the first layer in each set has a thickness less than 5 nm, and a second layer in each set has a thickness less than 5 nm;
- and
- a barrier layer between the layer of programmable resistance material and the stack of layers.
3 more elements
A switching device, comprising:
- a first electrode;
- a second electrode;
- and
- a stack of layers of ovonic materials between the first and second electrodes, the stack including a plurality of pairs of layers in which a first layer in each pair has a thickness less than 5 nm, and a second layer in each pair has a thickness less than 5 nm, the thickness of the first layer being at least twice the thickness of the second layer, and in which the ovonic material in the first and second layers in each pair in the plurality of pairs being different ovonic materials comprising Se.
1 more element
Dependencies are inferred from the claim text.