Magnetic random access memory and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJi-Feng Ying, Duen-Huei Hou
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Abstract
A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.
Claims18
A method of manufacturing a magnetic random access memory (MRAM) cell, the method comprising:
- forming a first magnetic layer over a substrate;
- forming a first non-magnetic material layer over the first magnetic layer;
- forming a second magnetic layer over the first non-magnetic material layer;
- forming a second non-magnetic material layer over the second magnetic layer;
- forming a third non-magnetic material layer in direct contact with the second non-magnetic material layer;
- and
- patterning the third non-magnetic material layer, the second non-magnetic material layer, the second magnetic layer, the first non-magnetic material layer and the first magnetic layer, thereby forming the MRAM cell,
- wherein the second magnetic layer in the MRAM cell includes a plurality of magnetic material pieces separated from each other, and
- each of the second and third non-magnetic material layers is made of a dielectric material.
A method of manufacturing a magnetic random access memory (MRAM) cell, the method comprising:
- forming a first magnetic layer over a substrate;
- forming a first non-magnetic material layer over the first magnetic layer;
- forming a second magnetic layer over the first non-magnetic material layer;
- forming a second non-magnetic material layer over the second magnetic layer and in direct contact with the first non-magnetic material layer;
- and
- patterning the second non-magnetic material layer, the second magnetic layer, the first non-magnetic material layer and the first magnetic layer, thereby forming the MRAM cell,
- wherein the second magnetic layer in the MRAM cell includes a plurality of islands of magnetic material separated from each other, and
- a thickness of the second non-magnetic material layer is greater than a largest height of the plurality of islands of magnetic material.
A semiconductor device including a magnetic random access memory (MRAM) cell, wherein the MRAM cell comprises:
- a first magnetic layer disposed over a substrate;
- a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer;
- a second magnetic layer disposed directly on the first non-magnetic material layer;
- and
- a second non-magnetic material layer disposed over the second magnetic layer;
- wherein the second magnetic layer includes a plurality of magnetic material pieces separated from each other, and
- a thickness of the second non-magnetic material layer is greater than a thickness of the second magnetic layer.
Dependencies are inferred from the claim text.