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US 10,541,268 B2Granted
Three-dimensional magnetic memory devices
AssigneeSpin Memory, Inc.
InventorsMarcin Gajek, Michail Tzoufras, Davide Guarisco, Eric Michael Ryan
Life of this patent
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Abstract
A magnetic memory device is provided. The magnetic memory device includes: (i) a cylindrical core, (ii) a first cylindrical ferromagnetic layer that surrounds the cylindrical core, (iii) a spacer layer that surrounds the first cylindrical ferromagnetic layer, and (iv) a second cylindrical ferromagnetic layer that surrounds the spacer layer. The cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer collectively form a magnetic tunnel junction.
Claims17
A magnetic memory device comprising:
- a cylindrical core;
- a first cylindrical ferromagnetic layer that surrounds the cylindrical core;
- a spacer layer that surrounds the first cylindrical ferromagnetic layer;
- and
- a second cylindrical ferromagnetic layer that surrounds the spacer layer, wherein the cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer collectively form a magnetic tunnel junction, wherein:
- the first cylindrical ferromagnetic layer has a first set of characteristics;
- and
- the second cylindrical ferromagnetic layer has a second set of characteristics that at least partially differ the first set of characteristics;
- a magnetic ground state of the first and second cylindrical ferromagnetic layers is based, at least in part, on the first and second sets of characteristics of the first and second cylindrical ferromagnetic layers, respectively;
- and
- the first and second sets of characteristics include:
- (i) thicknesses of the first and second cylindrical ferromagnetic layers and (ii) heights of the first and second cylindrical ferromagnetic layers, respectively.
9 more elements
Dependencies are inferred from the claim text.