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US 10,541,265 B2Granted
Semiconductor device and method for production of semiconductor device
AssigneeSony Corporation
InventorAtsushi Okuyama
Life of this patent
Estimating the term…
Abstract
A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.
Claims44
A semiconductor device comprising:
- a first semiconductor section including:
- a first dielectric layer,
- a first wiring layer,
- a light detecting device,
- a first pad formed at least partially within the first dielectric layer, and
- a first metal film;
- and
- a second semiconductor section including:
- a second dielectric layer,
- a second wiring layer,
- a logic circuit, and
- a second pad formed at least partially within the second dielectric layer,
- wherein the first dielectric layer and the second dielectric layer face each other such that the first pad and the second pad are directly connected, and
- wherein the second pad is attached to the first pad, the first metal film, and the first dielectric layer in a cross-section view.
11 more elements
A semiconductor device comprising:
- a first semiconductor section including:
- a first dielectric layer,
- a first wiring layer,
- a light detecting device, and
- a first pad formed at least partially within the first dielectric layer;
- and
- a second semiconductor section including:
- a second dielectric layer,
- a second wiring layer,
- a logic circuit, and
- a second pad formed at least partially within the second dielectric layer,
- wherein the first dielectric layer and the second dielectric layer face each other such that the first pad and the second pad are directly connected, and
- wherein the first pad and the second pad are different sizes in a cross-section view.
10 more elements
A semiconductor device comprising:
- a first semiconductor substrate including:
- a first interlayer dielectric layer;
- a first wiring layer;
- a light detecting device;
- a first pad formed at least partially within the first interlayer dielectric layer;
- and
- a plurality of first vias formed within the first interlayer dielectric layer,
- wherein at least one via of the plurality of first vias is connected to the first pad;
- and
- a second semiconductor substrate including:
- a second interlayer dielectric layer;
- a second wiring layer;
- a second pad formed at least partially within the second interlayer dielectric layer;
- and
- a plurality of second vias formed within the second interlayer dielectric layer, wherein at least one via of the plurality of second vias connected to the second pad,
- wherein the second semiconductor substrate further includes at least one of a logic circuit or a memory circuit, and
- wherein the first interlayer dielectric layer and the second interlayer dielectric layer face each other such that the first pad and the second pad are directly connected.
14 more elements
Dependencies are inferred from the claim text.