Optical sensor device having a depleted doping region adjacent to a control electrode and method for manufacturing the optical sensor device

Optical sensor device, comprising:

• a semiconductor substrate comprising a conversion region configured to convert an electromagnetic signal into photo-generated charge carriers in the conversion region;
• a read-out node configured to read-out a first portion of the photo-generated charge carriers;
• a control electrode;
• and
• a doping region arranged in the semiconductor substrate between the control electrode and the conversion region, wherein the doping region is adjacent to the control electrode and extends into the semiconductor substrate, wherein the doping region has a doping type different from the read-out node, and wherein the doping region has a doping concentration such that the doping region remains completely depleted during operation of the optical sensor device.